Invention Grant
- Patent Title: High electron mobility transistor manufacturing method and high electron mobility transistor
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Application No.: US15713727Application Date: 2017-09-25
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Publication No.: US10297447B2Publication Date: 2019-05-21
- Inventor: Hiroyuki Kinoshita
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2017-003299 20170112
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/263 ; H01L29/66 ; H01L29/778 ; H01L29/207 ; H01L29/20
Abstract:
Examples of a high electron mobility transistor manufacturing method includes forming a buffer layer including a nitride semiconductor doped with any one of carbon, iron, and magnesium on a substrate, forming a Schottky layer on the buffer layer, and irradiating the Schottky layer and the buffer layer with electrons or protons.
Public/Granted literature
- US20180197737A1 HIGH ELECTRON MOBILITY TRANSISTOR MANUFACTURING METHOD AND HIGH ELECTRON MOBILITY TRANSISTOR Public/Granted day:2018-07-12
Information query
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