Invention Grant
- Patent Title: Semiconductor device, making method, and laminate
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Application No.: US15928305Application Date: 2018-03-22
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Publication No.: US10297485B2Publication Date: 2019-05-21
- Inventor: Hiroyuki Yasuda , Michihiro Sugo , Hideto Kato , Kazunori Kondo
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2017-060638 20170327
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/683 ; H01L23/00 ; H01L23/31 ; C09J161/06 ; H01L21/56

Abstract:
A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E′ of 1-500 MPa at 25° C. and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.
Public/Granted literature
- US20180277415A1 SEMICONDUCTOR DEVICE, MAKING METHOD, AND LAMINATE Public/Granted day:2018-09-27
Information query
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