Invention Grant
- Patent Title: Interconnection structure, fabricating method thereof, and semiconductor device using the same
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Application No.: US15382492Application Date: 2016-12-16
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Publication No.: US10297548B2Publication Date: 2019-05-21
- Inventor: Yu-Hung Lin , Chi-Wen Liu , Horng-Huei Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/532 ; H01L23/535 ; H01L21/768 ; H01L21/3065 ; H01L23/528 ; H01L21/285 ; H01L23/485 ; H01L29/417
Abstract:
A semiconductor device includes a semiconductor substrate, an epitaxy structure present in the semiconductor substrate, and a silicide present on a textured surface of the epitaxy structure. A plurality of sputter ions are present between the silicide and the epitaxy structure. Since the surface of the epitaxy structure is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of a interconnection structure in the semiconductor device is reduced.
Public/Granted literature
- US20170098613A1 INTERCONNECTION STRUCTURE, FABRICATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2017-04-06
Information query
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