Invention Grant
- Patent Title: Integrated circuit structure having crown-shaped semiconductor strips and recesses in the substrate from etched dummy fins
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Application No.: US15399237Application Date: 2017-01-05
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Publication No.: US10297555B2Publication Date: 2019-05-21
- Inventor: Wan-Chun Kuan , Chih-Teng Liao , Yi-Wei Chiu , Tzu-Chan Weng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/24 ; H01L29/66 ; H01L29/78 ; H01L29/161 ; H01L21/84 ; H01L21/306 ; H01L21/8234
Abstract:
An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.
Public/Granted literature
- US20180033740A1 Dummy Fin Etch to Form Recesses in Substrate Public/Granted day:2018-02-01
Information query
IPC分类:
