Invention Grant
- Patent Title: Semiconductor device and fabrication method of the same
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Application No.: US15699990Application Date: 2017-09-08
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Publication No.: US10297588B2Publication Date: 2019-05-21
- Inventor: Wei-Cheng Lin , Hui-Ting Yang , Shih-Wei Peng , Jiann-Tyng Tzeng , Charles Chew-Yuen Young , Chih-Ming Lai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/485 ; H01L27/088 ; H01L21/8234 ; H01L23/522 ; H01L23/528
Abstract:
A semiconductor device includes at least one first gate strip, at least one second gate strip, at least one first conductive line and at least one first conductive via. An end surface of the at least one first gate strip and an end surface of the at least one second gate strip are opposite each other. The at least one first conductive line is over the at least one first gate strip and the at least one second gate strip and across the end surface of the at least one first gate strip and the end surface of the at least one second gate strip. The at least one first conductive via connects the at least one first conductive line and the at least one first gate strip.
Public/Granted literature
- US20180166431A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SAME Public/Granted day:2018-06-14
Information query
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