Invention Grant
- Patent Title: BiCMOS integration using a shared SiGe layer
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Application No.: US14659974Application Date: 2015-03-17
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Publication No.: US10297591B2Publication Date: 2019-05-21
- Inventor: Edward Preisler , Todd Thibeault
- Applicant: Newport Fab, LLC
- Applicant Address: US CA Newport Beach
- Assignee: Newport Fab, LLC
- Current Assignee: Newport Fab, LLC
- Current Assignee Address: US CA Newport Beach
- Agency: Farjami & Farjami LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/82 ; H01L29/16 ; H01L29/41 ; H01L21/8249 ; H01L29/417 ; H01L29/165
Abstract:
A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device is disclosed. The BiCMOS device includes a CMOS device in a CMOS region, a PNP bipolar device in a bipolar region, and an NPN bipolar device in the bipolar region. The BiCMOS device includes also includes a silicon-germanium (SiGe) layer over a base of the PNP bipolar device and over a selectively implanted collector of the NPN bipolar device, wherein a first portion of the SiGe layer forms a base of the NPN bipolar device, and a second portion of the SiGe layer forms an emitter of the PNP bipolar device.
Public/Granted literature
- US20150303187A1 BiCMOS Integration Using a Shared SiGe Layer Public/Granted day:2015-10-22
Information query
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