A non-volatile memory having discrete isolation structures and SONOS (Silicon Oxide Nitride Oxide Silicon) memory cells, a method of operating the same, and a method of manufacturing the same are introduced. Every isolation structure on a semiconductor substrate having an array region has a plurality of gaps so as to form discrete isolation structures and thereby implant source lines in the gaps of the semiconductor substrate. Since the source lines are not severed by the isolation structures, the required quantity of barrier pins not connected to the source line is greatly reduced, thereby reducing the space required for the barrier pins in the non-volatile memory.