Invention Grant
- Patent Title: Techniques for perovskite layer crystallization
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Application No.: US14449420Application Date: 2014-08-01
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Publication No.: US10297754B2Publication Date: 2019-05-21
- Inventor: Talia S. Gershon , Supratik Guha , Oki Gunawan , Teodor K. Todorov
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L51/48
- IPC: H01L51/48 ; H01L31/18 ; H01L51/00 ; H01L31/04 ; G01J3/46

Abstract:
Vacuum annealing-based techniques for forming perovskite materials are provided. In one aspect, a method of forming a perovskite material is provided. The method includes the steps of: depositing a metal halide layer on a sample substrate; and vacuum annealing the metal halide layer and methylammonium halide under conditions sufficient to form methylammonium halide vapor which reacts with the metal halide layer and forms the perovskite material on the sample substrate. A perovskite-based photovoltaic device and method of formation thereof are also provided.
Public/Granted literature
- US20160035917A1 Techniques for Perovskite Layer Crystallization Public/Granted day:2016-02-04
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