Provided is a treatment method of an emitting layer raw material in an OLED, comprising steps of: (1) providing the emitting layer raw material, and the emitting layer raw material comprising a host and a dopant, and in a vacuum glove box with protective gas, adding the host, the dopant and anhydrous ethanol into a polytetrafluoroethylene lining to be mixed uniformly, and putting the lining in a high pressure autoclave to be treated at a temperature of 40 to 60 celsius degrees for 18 to 36 hours to obtain a treatment liquid; (2) centrifuging the treatment liquid to collect a precipitate, and drying the collected precipitate to obtain the emitting layer raw material after treatment. The resulting treated emitting layer raw material achieves sufficient mixing and dispersion of the host and the dopant, and does not affect the subsequent use of vacuum evaporation method to form an emitting layer.