Invention Grant
- Patent Title: High frequency transmission line with an open-ended stub
-
Application No.: US15448566Application Date: 2017-03-02
-
Publication No.: US10297893B2Publication Date: 2019-05-21
- Inventor: Satoru Fukuchi
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01P1/207

Abstract:
A circuit includes a conductive layer, an insulation layer on the conductive layer, a transmission line on the insulation layer, the transmission line having a first end and a second end, and a stub on the insulation layer and having a first section of a first constant width connected to the transmission line at a location on the transmission line between the first and second ends, and a second section of a second constant width adjacent to the first section. The first constant width is less than the second constant width.
Public/Granted literature
- US20180254537A1 HIGH FREQUENCY TRANSMISSION LINE WITH AN OPEN-ENDED STUB Public/Granted day:2018-09-06
Information query