Invention Grant
- Patent Title: Polycrystalline silicon fragment, method for manufacturing polycrystalline silicon fragment, and polycrystalline silicon block fracture device
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Application No.: US15518637Application Date: 2015-10-09
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Publication No.: US10307763B2Publication Date: 2019-06-04
- Inventor: Kazuhiro Kawaguchi , Masami Fujii , Sho Uchida , Manabu Kondo , Yoshifumi Mito , Nobuaki Yoshimatsu
- Applicant: Tokuyama Corporation
- Applicant Address: JP Yamaguchi
- Assignee: Tokuyama Corporation
- Current Assignee: Tokuyama Corporation
- Current Assignee Address: JP Yamaguchi
- Agency: Cahn & Samuels, LLP
- Priority: JP2014-210124 20141014; JP2014-240419 20141127
- International Application: PCT/JP2015/078723 WO 20151009
- International Announcement: WO2016/060076 WO 20160421
- Main IPC: C03B37/10
- IPC: C03B37/10 ; B02C1/04 ; C01B33/02 ; B02C23/10 ; C30B15/02 ; B02C23/30
Abstract:
Polycrystalline silicon fragments obtained by fracturing polycrystalline silicon blocks wherein a content ratio of polycrystalline silicon powder having a particle size of 500 to 1000 μm is 0.1 to 40 ppmw.
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