A method of producing a semiconductor chip, including the following steps (a) to (d): (a) a step of, in the state of having laminated a mask-integrated surface protective tape on the side of a patterned surface of a semiconductor wafer, grinding the backing-face of the semiconductor wafer; laminating a wafer fixing tape on the backing-face side of the ground semiconductor wafer; and supporting and fixing the wafer to a ring flame; (b) a step of, after peeling the surface protective tape thereby to expose the mask material layer on top, forming an opening of a street of the semiconductor wafer; (c) a plasma dicing step of segmentalizing the semiconductor wafer by a plasma irradiation to singulate it into semiconductor chips; and (d) an ashing step of removing the mask material layer by the plasma irradiation.