Invention Grant
- Patent Title: Method for manufacturing two-dimensional transition metal dichalcogemide thin film
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Application No.: US15562545Application Date: 2016-07-28
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Publication No.: US10309011B2Publication Date: 2019-06-04
- Inventor: Sang Woo Kang , Ji Hun Mun
- Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Applicant Address: KR Daejeon
- Assignee: Korea Research Institute of Standards and Science
- Current Assignee: Korea Research Institute of Standards and Science
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2015-0107443 20150729; KR10-2016-0093974 20160725
- International Application: PCT/KR2016/008303 WO 20160728
- International Announcement: WO2017/018834 WO 20170202
- Main IPC: C01B17/20
- IPC: C01B17/20 ; C01G39/06 ; C23C16/02 ; C23C16/30 ; C23C16/52 ; C30B25/16 ; C30B25/18 ; C30B29/46 ; C30B29/64 ; C23C16/455
Abstract:
The present invention relates to a method for preparing a two-dimensional transition metal dichalcogenide and, more particularly, to a method for preparing a highly uniform two-dimensional transition metal dichalcogenide thin film. More specifically, the present invention is directed to a preparation method for a highly uniform two-dimensional transition metal dichalcogenide thin film at low temperature of 500° C. or below.
Public/Granted literature
- US20180105930A1 METHOD FOR MANUFACTURING TWO-DIMENSIONAL TRANSITION METAL DICHALCOGEMIDE THIN FILM Public/Granted day:2018-04-19
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