Invention Grant
- Patent Title: Solid-state shear stress sensors with high selectivity
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Application No.: US15211838Application Date: 2016-07-15
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Publication No.: US10309845B2Publication Date: 2019-06-04
- Inventor: Neal A. Hall , Donghwan Kim , Randall P. Williams , David P. Gawalt , Bradley D. Avenson , Caesar T. Garcia , Kristofer L. Gleason
- Applicant: SILICON AUDIO, INC. , BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM
- Applicant Address: US TX Austin US TX Austin
- Assignee: Silicon Audio, Inc.,Board of Regents of the University of Texas System
- Current Assignee: Silicon Audio, Inc.,Board of Regents of the University of Texas System
- Current Assignee Address: US TX Austin US TX Austin
- Agency: Meyertons Hood Kivlin Kowert and Goetzel PC
- Agent Jeffrey C. Hood; Brian E. Moore
- Main IPC: G01L1/16
- IPC: G01L1/16 ; G01L1/14

Abstract:
Embodiments of solid-state stress sensors are presented herein. A sensor system may include a substrate, a first layer of sensing material disposed on a first surface of the substrate, and at least three electrodes forming a first and second electrode pair. The at least three electrodes may include a first electrode, a second electrode, and a third electrode. The first electrode may be disposed in a first plane and the second electrode and the third electrode may be disposed in a second plane, the first and second planes associated with a first direction parallel to the first surface. The first and second electrodes may be at least partially offset in the first direction. The first and third electrodes may be at least partially offset in the first direction. The sensor system may be configured to generate an output signal in response to a shear stress within the sensing material.
Public/Granted literature
- US20170016783A1 Solid-State Shear Stress Sensors with High Selectivity Public/Granted day:2017-01-19
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