Invention Grant
- Patent Title: Methods and apparatus for a capacitive sensor
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Application No.: US16102099Application Date: 2018-08-13
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Publication No.: US10310694B2Publication Date: 2019-06-04
- Inventor: Takayasu Otagaki , Kensuke Goto
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: The Noblitt Group, PLLC
- Agent Hettie L. Haines
- Main IPC: G06F3/045
- IPC: G06F3/045 ; G06F3/044 ; G06F3/041

Abstract:
Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise additional external capacitors coupled in parallel with internal variable capacitors to increase the effective capacitance of a detection circuit allowing for a larger sensing element, and therefore a stronger sensing field, without increasing the applied voltage or the internal capacitance of the proximity sensor. In alternative embodiments, the methods and apparatus may be configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field.
Public/Granted literature
- US20190004631A1 METHODS AND APPARATUS FOR A CAPACITIVE SENSOR Public/Granted day:2019-01-03
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