The present disclosure provides memory control methods and memory control apparatus. An exemplary method includes providing a memory having a targeted memory zone, the targeted memory zone having a plurality of memory cells, and a storage capacity of each memory cell being one page; receiving and reading out to-be-stored data and obtaining the targeted address information of the to-be-stored data; reading out data status of all memory cells of a targeted memory zone; determining the data status of the memory cells of the targeted memory zone; performing a programming operation to a memory cell with an erased state to write the to-be-stored data into the memory cell with the erased state; and performing an erasing operation to a memory cell having a logic address of written data to remove the logic address.