Invention Grant
- Patent Title: Memory system
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Application No.: US15459294Application Date: 2017-03-15
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Publication No.: US10310942B2Publication Date: 2019-06-04
- Inventor: Marie Takada , Masanobu Shirakawa
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G06F12/08 ; G11C11/56

Abstract:
A memory system includes: a semiconductor memory device; and a controller. When receiving the first read instruction, the semiconductor memory device issues a strobe signal at a first timing to read data from the first memory cell and the second memory cell. When receiving the second read instruction, the semiconductor memory device sets the first memory cell to a non-read target and reads data from the second memory cell based on a strobe result of the data at the first timing.
Public/Granted literature
- US20180081575A1 MEMORY SYSTEM Public/Granted day:2018-03-22
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