Invention Grant
- Patent Title: Anisotropy field induced self pinned recessed antiferromagnetic reader
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Application No.: US15992488Application Date: 2018-05-30
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Publication No.: US10311901B1Publication Date: 2019-06-04
- Inventor: Quang Le , Hongquan Jiang , Yongchul Ahn , Alexander M. Zeltser
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- Agent Steven Versteeg
- Main IPC: G11B5/40
- IPC: G11B5/40 ; G11B5/39 ; G01R33/09 ; G11B5/187 ; G11B5/11 ; G11B5/31

Abstract:
The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic read head. The magnetic read head includes an antiferromagnetic layer recessed from the MFS, a reference layer disposed over the antiferromagnetic layer, a free layer disposed over the reference layer, and a thermally conductive structure disposed over the reference layer. The thermally conductive structure is recessed from the MFS. The thermally conductive structure includes a first portion and a second portion. The first portion of the thermally conductive structure extends from the second portion of the thermally conductive structure towards the MFS. The first portion of the thermally conductive structure is aligned with the free layer in a stripe height direction. With the thermally conductive structure, thermal stabilization of the read head is achieved.
Information query
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