A memory system may include: a controller suitable for: generating a first clock and first pattern data having a first phase difference, in a write calibration mode, calibrating, the first phase difference depending on a second information, in a read calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, a first information according to comparing of the first and second values, receiving by calibrating, a second phase difference generated by a memory device depending on the first information; and the memory device suitable for: generating the second clock and the second pattern data having the second phase difference, in the write calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, the second information according to comparing of the first and second values.