Invention Grant
- Patent Title: Semiconductor integrated circuit device and wearable device
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Application No.: US15888426Application Date: 2018-02-05
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Publication No.: US10311943B2Publication Date: 2019-06-04
- Inventor: Shiro Kamohara , Yasushi Yamagata , Takumi Hasegawa , Nobuyuki Sugii
- Applicant: Renesas Electronics Corporation
- Applicant Address: unknown Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: unknown Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-255557 20141217
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G04G21/02 ; H01L27/11 ; H01L27/12 ; G11C11/417 ; H01L27/092 ; H04B1/3827

Abstract:
To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption.A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.
Public/Granted literature
- US20180158512A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND WEARABLE DEVICE Public/Granted day:2018-06-07
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