Invention Grant
- Patent Title: Inductor formed in substrate
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Application No.: US13711149Application Date: 2012-12-11
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Publication No.: US10312007B2Publication Date: 2019-06-04
- Inventor: Mihir K Roy , Mathew J Manusharow , Harold Ryan Chase
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01F17/00
- IPC: H01F17/00

Abstract:
A method and device includes a first conductor formed on a first dielectric layer as a partial turn of a coil. A second conductor is formed on a second dielectric layer that covers the first dielectric layer and first conductor, the second conductor forming a partial turn of the coil. A vertical interconnect couples the first and second conductors to form a first full turn of the coil. The interconnect coupling can be enhanced by embedding some selective magnetic materials into the substrate.
Public/Granted literature
- US20140159850A1 INDUCTOR FORMED IN SUBSTRATE Public/Granted day:2014-06-12
Information query
IPC分类:
H | 电学 |
H01 | 基本电气元件 |
H01F | 磁体;电感;变压器;磁性材料的选择 |
H01F17/00 | 信号类型的固定电感器 |