Invention Grant
- Patent Title: Treatment system and method
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Application No.: US14989227Application Date: 2016-01-06
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Publication No.: US10312075B2Publication Date: 2019-06-04
- Inventor: Wan-Yi Kao , Kuang-Yuan Hsu , Tze-Liang Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/027 ; H01L21/3105 ; H01L21/311

Abstract:
A method of descumming a dielectric layer is provided. In an embodiment the dielectric layer is deposited over a substrate, and a photoresist is applied, exposed, and developed after the photoresist has been applied. Once the pattern of the photoresist is transferred to the underlying dielectric layer, a descumming process is performed, wherein the descumming process utilizes a mixture of a carbon-containing precursor, a descumming precursor, and a carrier gas. The mixture is ignited into a treatment plasma, and the treatment plasma is applied to the dielectric layer in order to descum the dielectric layer.
Public/Granted literature
- US20170092487A1 Treatment System and Method Public/Granted day:2017-03-30
Information query
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