Invention Grant
- Patent Title: Method of manufacturing silicon on insulator substrate
-
Application No.: US15459404Application Date: 2017-03-15
-
Publication No.: US10312133B2Publication Date: 2019-06-04
- Inventor: Tetsuya Yamada , Hiromichi Kinpara , Shinjirou Uchida , Masamitsu Fukuda
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , SUMCO CORPORATION
- Applicant Address: JP Toyota JP Tokyo
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,SUMCO CORPORATION
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,SUMCO CORPORATION
- Current Assignee Address: JP Toyota JP Tokyo
- Agency: Oliff PLC
- Priority: JP2016-059090 20160323
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/266 ; H01L21/324 ; H01L21/761 ; H01L21/762

Abstract:
A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.
Public/Granted literature
- US20170278741A1 METHOD OF MANUFACTURING SILICON ON INSULATOR SUBSTRATE Public/Granted day:2017-09-28
Information query
IPC分类: