Invention Grant
- Patent Title: Combined wafer production method with laser treatment and temperature-induced stresses
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Application No.: US15028332Application Date: 2014-10-08
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Publication No.: US10312135B2Publication Date: 2019-06-04
- Inventor: Wolfram Drescher , Jan Richter , Christian Beyer
- Applicant: Siltectra, GmbH
- Applicant Address: DE Dresden
- Assignee: Siltectra, GmbH
- Current Assignee: Siltectra, GmbH
- Current Assignee Address: DE Dresden
- Agency: Great Lakes Intellectual Property, PLLC
- Priority: DE102013016666 20131008; DE102014013107 20140903
- International Application: PCT/EP2014/071512 WO 20141008
- International Announcement: WO2015/052220 WO 20150416
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/762 ; B23K26/359 ; H01L31/18 ; B28D5/00 ; H01L21/268 ; H01L21/02 ; B23K26/40 ; B23K26/0622 ; H01L23/544 ; H01L23/00 ; B23K26/53 ; B23K26/00 ; C30B33/06 ; B23K103/00

Abstract:
A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body.
Public/Granted literature
- US20160254232A1 Combined wafer production method with laser treatment and temperature-induced stresses Public/Granted day:2016-09-01
Information query
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