Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
-
Application No.: US15061993Application Date: 2016-03-04
-
Publication No.: US10312143B2Publication Date: 2019-06-04
- Inventor: Tatsuo Migita , Koji Ogiso
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2015-110745 20150529
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768
Abstract:
A semiconductor device includes a semiconductor substrate, a metal member, and a metal oxide film. The semiconductor substrate is provided with a through-hole that passes through the semiconductor substrate from one surface to another surface opposite to the one surface. The metal member is provided in the through-hole, and includes a cavity therein defined by an internal surface. The metal oxide film coats the internal surface.
Public/Granted literature
- US20160351450A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-12-01
Information query
IPC分类:
