A wafer processing method for divides a wafer into individual device chips along a plurality of division lines. The method includes forming a dividing groove along each division line formed on the front side of the wafer, the dividing groove having a depth corresponding to the finished thickness of each device chip, thinning the wafer to expose the dividing groove to the back side of the wafer, thereby dividing the wafer into the individual device chips, applying a liquid resin for die bonding to the back side of the wafer and next solidifying the liquid resin applied to the back side of the wafer, thereby forming a die bonding resin film having a predetermined thickness on the back side of each device chip, and isolating each device chip from the wafer.