A method is presented for forming a device having multiple field effect transistors (FETs) with each FET having a different work function. In particular, the method includes forming multiple microchips in which each FET has a different threshold voltage (Vt) or work-function. In one embodiment, four FETs are formed over a semiconductor substrate. Each FET has a source, drain and a gate electrode. Each gate electrode is processed independently to provide a substantially different threshold voltage.