Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15541507Application Date: 2015-04-15
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Publication No.: US10312178B2Publication Date: 2019-06-04
- Inventor: Takanobu Kajihara , Katsuhiko Omae , Shunsuke Fushie , Muneaki Mukuda , Daisuke Nakashima , Masahiro Motooka , Hiroyuki Miyanishi , Yuki Nakamatsu , Junya Suzuki
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- International Application: PCT/JP2015/061574 WO 20150415
- International Announcement: WO2016/166835 WO 20161020
- Main IPC: H01L23/433
- IPC: H01L23/433 ; H01L23/29 ; H01L23/31 ; H01L25/18 ; H01L25/16 ; H01L23/36 ; H01L23/495 ; H01L23/498 ; H01L21/56

Abstract:
In a semiconductor device, a thinly-molded portion covering a whole of a heat dissipating surface portion of a lead frame and a die pad space filled portion are integrally molded from a second mold resin, because of which adhesion between the thinly-molded portion and lead frame improves owing to the die pad space filled portion adhering to a side surface of the lead frame. Also, as the thinly-molded portion is partially thicker owing to the die pad space filled portion, strength of the thinly-molded portion increases, and a deficiency or cracking is unlikely to occur.
Public/Granted literature
- US20180005920A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-01-04
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