Invention Grant
- Patent Title: Structure of integrated inductor
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Application No.: US14727139Application Date: 2015-06-01
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Publication No.: US10312190B2Publication Date: 2019-06-04
- Inventor: Kai-Yi Huang , Hsiao-Tsung Yen
- Applicant: REALTEK SEMICONDUCTOR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Priority: TW103126057A 20140730
- Main IPC: H01F17/00
- IPC: H01F17/00 ; H01L23/522

Abstract:
This invention discloses an integrated inductor structure, including a first metal trace, a second metal trace, and a connecting metal trace. Tow terminals of the connecting metal trace are respectively connected to the first metal trace and the second metal trace through at least a connecting structure. The connected first metal trace, the connecting metal trace and the second metal trace together form an inductor structure. The connecting structure is connected to a connecting area of the first metal trace. The connecting area of the first metal trace has a first width. A smallest width of the first metal trace is a second width. The second width is smaller than the first width.
Public/Granted literature
- US20160035671A1 Structure of Integrated Inductor Public/Granted day:2016-02-04
Information query
IPC分类:
H | 电学 |
H01 | 基本电气元件 |
H01F | 磁体;电感;变压器;磁性材料的选择 |
H01F17/00 | 信号类型的固定电感器 |