Invention Grant
- Patent Title: Semiconductor device and a manufacturing method thereof
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Application No.: US15699756Application Date: 2017-09-08
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Publication No.: US10312254B2Publication Date: 2019-06-04
- Inventor: Atsushi Yoshitomi , Yoshiyuki Kawashima
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-177625 20160912
- Main IPC: H01L27/1157
- IPC: H01L27/1157 ; H01L21/28 ; H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L29/792 ; H01L29/40 ; H01L29/49
Abstract:
The reliability and performances of a semiconductor device having a nonvolatile memory are improved. A control gate electrode is formed over a semiconductor substrate via a first insulation film. A memory gate electrode is formed over the semiconductor substrate via a second insulation film having a charge accumulation part. The second insulation film is formed across between the semiconductor substrate and the memory gate electrode, and between the control gate electrode and the memory gate electrode. Between the control gate electrode and the memory gate electrode, a third insulation film is formed between the second insulation film and the memory gate electrode. The third insulation film is not formed under the memory gate electrode. A part of the memory gate electrode is present under the lower end face of the third insulation film.
Public/Granted literature
- US20180076206A1 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF Public/Granted day:2018-03-15
Information query
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