Invention Grant
- Patent Title: Front side illuminated image sensor device structure and method for forming the same
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Application No.: US15644022Application Date: 2017-07-07
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Publication No.: US10312278B2Publication Date: 2019-06-04
- Inventor: Tsun-Kai Tsao , Shih-Pei Chou , Jiech-Fun Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An FSI image sensor device structure is provided. The FSI image sensor device structure includes a pixel region formed in a substrate and a storage region formed in the substrate and adjacent to the pixel region. The FSI image sensor device structure includes a storage gate structure formed over the storage region, and the storage gate structure includes a top surface and sidewall surfaces. The FSI image sensor device structure includes a metal shield structure formed on the storage gate structure, and the top surface and the sidewall surfaces of the storage gate structure are covered by the metal shield structure.
Public/Granted literature
- US20180286905A1 FRONT SIDE ILLUMINATED IMAGE SENSOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2018-10-04
Information query
IPC分类:
