A semiconductor memory device comprises a substrate, a plurality of first wirings arranged in a first direction crossing a surface of the substrate, a second wiring extending in the first direction, a variable resistance film provided between the first wiring and the second wiring, a third wiring extending in a second direction crossing the first direction, a select transistor provided between an end of the second wiring and the third wiring. In addition, the semiconductor memory device comprises a chalcogen layer provided at at least a position between the end of the second wiring and the select transistor, and, a position between the third wiring and the select transistor.