Invention Grant
- Patent Title: Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device
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Application No.: US15905984Application Date: 2018-02-27
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Publication No.: US10312330B2Publication Date: 2019-06-04
- Inventor: Johji Nishio , Ryosuke Iijima , Kazuto Takao , Takashi Shinohe
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-057283 20140319
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/02 ; H01L21/265 ; H01L29/32 ; H01L29/66 ; H01L29/861 ; H01L21/04 ; H01L29/739
Abstract:
In a method for fabricating a semiconductor substrate according to an embodiment, an SiC substrate is formed by vapor growth and C (carbon) is introduced into the surface of the SiC substrate to form an n-type SiC layer on the SiC substrate by an epitaxial growth method.
Public/Granted literature
- US20180190775A1 METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE Public/Granted day:2018-07-05
Information query
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