Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US15824083Application Date: 2017-11-28
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Publication No.: US10312341B2Publication Date: 2019-06-04
- Inventor: Ha-jin Lim , Gi-gwan Park , Weon-hong Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0155796 20151106
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/78 ; H01L21/8234 ; H01L29/51 ; H01L27/088 ; H01L29/423 ; H01L27/092 ; H01L21/8238
Abstract:
An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.
Public/Granted literature
- US20180090585A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-03-29
Information query
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