Invention Grant
- Patent Title: Device and device manufacturing method
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Application No.: US15220348Application Date: 2016-07-26
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Publication No.: US10312343B2Publication Date: 2019-06-04
- Inventor: Shigemi Miyazawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2015-182851 20150916
- Main IPC: H01L29/866
- IPC: H01L29/866 ; H01L29/66 ; H01L29/739 ; H01L27/06 ; H01L27/07
Abstract:
A device includes a vertical semiconductor switch including (i) a gate terminal and a first terminal provided on a substrate and (ii) a second terminal provided on the substrate, where the vertical semiconductor switch is configured to electrically connect or disconnect the first terminal and the second terminal, a first insulative film provided on the substrate, a second insulative film provided on the substrate, where the second insulative film is in contact with the first insulative film and thinner than the first insulative film, and a zener diode formed on the first insulative film and the second insulative film, where the zener diode includes a first portion that is formed on the first insulative film and connected to the first surface of the substrate and a second portion that is formed on the second insulative film and connected to the gate terminal.
Public/Granted literature
- US20170077088A1 DEVICE AND DEVICE MANUFACTURING METHOD Public/Granted day:2017-03-16
Information query
IPC分类:
