Invention Grant
- Patent Title: Lateral gallium nitride JFET with controlled doping profile
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Application No.: US15882955Application Date: 2018-01-29
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Publication No.: US10312378B2Publication Date: 2019-06-04
- Inventor: Vladimir Odnoblyudov , Ozgur Aktas
- Applicant: QROMIS, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Qromis, Inc.
- Current Assignee: Qromis, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/808
- IPC: H01L29/808 ; H01L29/66 ; H01L29/08 ; H01L21/8252 ; H01L29/20 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/36 ; H01L29/10 ; H01L29/12
Abstract:
A lateral junction field-effect transistor includes a substrate of a first conductivity type having a dopant concentration; a first semiconductor layer of the first conductivity type having a first dopant concentration lower than the dopant concentration and disposed on the substrate; a second semiconductor layer of a second conductivity type having a second dopant concentration, the second conductivity type being different from the first conductivity type, the second semiconductor layer disposed on the first semiconductor layer; a third semiconductor layer of the first conductivity type having a third dopant concentration, the third semiconductor layer disposed on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type having a fourth dopant concentration lower than the dopant concentration, the fourth semiconductor layer disposed on the third semiconductor layer; a source region and a drain region disposed in the second semiconductor layer and on opposite sides of the third semiconductor layer.
Public/Granted literature
- US20180219106A1 LATERAL GALLIUM NITRIDE JFET WITH CONTROLLED DOPING PROFILE Public/Granted day:2018-08-02
Information query
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