Invention Grant
- Patent Title: Solar cell
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Application No.: US15351455Application Date: 2016-11-15
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Publication No.: US10312384B2Publication Date: 2019-06-04
- Inventor: Chao-Cheng Lin , Chien-Kai Peng , Chen-Cheng Lin , Chen-Hsun Du , Chorng-Jye Huang , Chun-Ming Yeh
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW105134485A 20161026
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/028 ; H01L31/18 ; H01L31/0747

Abstract:
A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.
Public/Granted literature
- US20180114871A1 SOLAR CELL Public/Granted day:2018-04-26
Information query
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