Invention Grant
- Patent Title: Method of manufacturing piezoelectric element and piezoelectric substrate
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Application No.: US15059318Application Date: 2016-03-03
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Publication No.: US10312430B2Publication Date: 2019-06-04
- Inventor: Chen-Chu Hsu , Ying-Hung Tsai , Wei-Chung Chuang , Somnath Mondal
- Applicant: Interface Optoelectronics (ShenZhen) Co., Ltd. , General Interface Solution Limited
- Applicant Address: CN Shenzhen TW Miaoli County
- Assignee: INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD.,GENERAL INTERFACE SOLUTION LIMITED
- Current Assignee: INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD.,GENERAL INTERFACE SOLUTION LIMITED
- Current Assignee Address: CN Shenzhen TW Miaoli County
- Agency: CKC & Partners Co., LLC
- Priority: CN201510760261 20151109
- Main IPC: H01L41/25
- IPC: H01L41/25 ; H01L41/319 ; H01L41/316 ; H01L41/314 ; H01L41/053 ; H01L41/08 ; H01L41/317 ; H01L41/331 ; H05K3/12 ; H03H9/13 ; H01L41/193

Abstract:
A method of manufacturing a piezoelectric element includes: forming a patterned mask layer over a substrate, in which the patterned mask layer has an opening exposing a portion of the substrate; forming a piezoelectric element in the opening; and removing the patterned mask layer to obtain the piezoelectric element, in which the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion.
Public/Granted literature
- US20170133582A1 METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC SUBSTRATE Public/Granted day:2017-05-11
Information query
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