Invention Grant
- Patent Title: III-V chip preparation and integration in silicon photonics
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Application No.: US15592704Application Date: 2017-05-11
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Publication No.: US10312661B2Publication Date: 2019-06-04
- Inventor: Damien Lambert
- Applicant: Skorpios Technologies, Inc.
- Applicant Address: US NM Albuquerque
- Assignee: Skorpios Technologies, Inc.
- Current Assignee: Skorpios Technologies, Inc.
- Current Assignee Address: US NM Albuquerque
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/022
- IPC: H01S5/022 ; G02B6/42 ; H01L23/00 ; G02B6/136 ; G02B6/122 ; G02B6/12 ; H01S5/02
Abstract:
A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.
Public/Granted literature
- US20170331248A1 III-V CHIP PREPARATION AND INTEGRATION IN SILICON PHOTONICS Public/Granted day:2017-11-16
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