Invention Grant
- Patent Title: Selective error rate information for multidimensional memory
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Application No.: US15472957Application Date: 2017-03-29
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Publication No.: US10318381B2Publication Date: 2019-06-11
- Inventor: Justin M. Eno , Samuel E. Bradshaw
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G06F11/07
- IPC: G06F11/07 ; G06F11/10

Abstract:
A memory device can include three-dimensional memory entities each including a plurality of two-dimensional memory entities. A controller can read data from the memory at a first resolution and collect error rate information from the memory at a second resolution including a portion of a two-dimensional memory entity. The controller can determine a quantity of two-dimensional memory entities that have a greater error rate than a remainder of the two-dimensional memory entities based on the error rate information. The controller can determine a quantity of portions of three-dimensional memory entities that have a greater error rate than a remainder of the portions of three-dimensional memory entities based on the error rate information excluding error rate information for portions of the two-dimensional memory entities associated with the quantity of two-dimensional memory entities. The controller can cull the quantity of the two-dimensional memory entities and the quantity of the three-dimensional memory entities.
Public/Granted literature
- US20180285187A1 SELECTIVE ERROR RATE INFORMATION FOR MULTIDIMENSIONAL MEMORY Public/Granted day:2018-10-04
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