Invention Grant
- Patent Title: Artificial neuron apparatus
-
Application No.: US14742690Application Date: 2015-06-17
-
Publication No.: US10318861B2Publication Date: 2019-06-11
- Inventor: Evangelos S. Eleftheriou , Angeliki Pantazi , Abu Sebastian , Tomas Tuma
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Daniel P. Morris
- Main IPC: G06N7/02
- IPC: G06N7/02 ; G06N7/04 ; G06N7/06 ; G06N7/08 ; G06N3/04 ; G06N3/063

Abstract:
A resistive memory cell is connected in circuitry which has a first input terminal for applying neuron input signals including a read portion and a write portion. The circuitry includes a read circuit producing a read signal dependent on resistance of the memory cell, and an output terminal providing a neuron output signal, dependent on the read signal in a first state of the memory cell. The circuitry also includes a storage circuit storing a measurement signal dependent on the read signal, and a switch set operable to supply the read signal to the storage circuit during application of the read portion of each neuron input signal to the memory cell, and, after application of the read portion, to apply the measurement signal in the apparatus to enable resetting of the memory cell to a second state.
Public/Granted literature
- US20160371582A1 ARTIFICIAL NEURON APPARATUS Public/Granted day:2016-12-22
Information query