Invention Grant
- Patent Title: Memory with margin current addition and related methods
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Application No.: US15797860Application Date: 2017-10-30
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Publication No.: US10319438B2Publication Date: 2019-06-11
- Inventor: Emanuela Calvetti , Marcella Carissimi , Marco Pasotti
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Slater Matsil, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C13/00 ; G11C16/26 ; G11C11/16 ; G11C7/06 ; G11C16/24 ; G11C16/28 ; G11C16/34
Abstract:
In accordance with an embodiment, a memory includes: a memory element, a sense amplifier circuit configured to sense a difference during a sense operation between a sense current passing through the memory element and a reference current, and a margin current branch coupled in parallel with the memory element and configured to selectively add a margin current to the sense current.
Public/Granted literature
- US20180068721A1 Memory with Margin Current Addition and Related Methods Public/Granted day:2018-03-08
Information query
