Invention Grant
- Patent Title: Circuits and methods of reference-current generation for flash
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Application No.: US15609414Application Date: 2017-05-31
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Publication No.: US10319448B2Publication Date: 2019-06-11
- Inventor: Guangjun Yang
- Applicant: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201611025167 20161115
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/04 ; G11C16/08 ; G11C16/16

Abstract:
A reference-current generation method for flash includes first and second memory arrays separated by a word-line switching circuit. A reference-current generation circuit includes rows of reference cells, the first row parallel with the other rows of the first memory array and having the same number of columns as the other rows thereof, and the second row parallel with the other rows of the second memory array and having the same number of columns as the other rows thereof. The first reference word line of the first row is disconnected with the second reference word line of the second row. After programming, the first row enables the first memory array to create the first reference current used while performing read operation for the second memory array, and the second row enables the second memory array to create the second reference current used while performing read operation for the first memory array.
Public/Granted literature
- US20180137923A1 CIRCUITS AND METHODS OF REFERENCE-CURRENT GENERATION FOR FLASH Public/Granted day:2018-05-17
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