Invention Grant
- Patent Title: Method and apparatus for thinning wafer
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Application No.: US14785372Application Date: 2014-04-02
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Publication No.: US10319598B2Publication Date: 2019-06-11
- Inventor: Sung Wook Kim
- Applicant: Hanwha Techwin Co., Ltd.
- Applicant Address: KR Changwon-si
- Assignee: HANWHA PRECISION MACHINERY CO., LTD.
- Current Assignee: HANWHA PRECISION MACHINERY CO., LTD.
- Current Assignee Address: KR Changwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2013-0043080 20130418
- International Application: PCT/KR2014/002808 WO 20140402
- International Announcement: WO2014/171649 WO 20141023
- Main IPC: H01L21/304
- IPC: H01L21/304 ; B23K26/00 ; B23K26/402 ; B28D5/00 ; B23K26/53 ; H01L21/78 ; B23K26/40 ; B23K26/073 ; B23K26/08 ; B23K26/70 ; B23K103/00 ; B23K101/40 ; B23K103/16
Abstract:
A method and an apparatus for thinning a wafer are provided. The method for thinning a wafer, according to one embodiment of the present invention, comprises the steps of: irradiating a line beam focused at a specific depth of the wafer; scanning the wafer by using the line beam so as to form an interface at the specific depth of the wafer; and cleaving the wafer on which the interface is formed into a pattern wafer and a dummy wafer.
Public/Granted literature
- US20160064229A1 METHOD AND APPARATUS FOR THINNING WAFER Public/Granted day:2016-03-03
Information query
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