Invention Grant
- Patent Title: Capacitor embedded with nanocrystals
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Application No.: US14995036Application Date: 2016-01-13
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Publication No.: US10319675B2Publication Date: 2019-06-11
- Inventor: Cheng-Chieh Lai , Meng-Ting Yu , Yung-Hsien Wu , Kuang-Hsin Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/02 ; H01L21/283 ; H01L21/324 ; H01L23/535 ; H01L27/06 ; H01L49/02 ; H01L27/108

Abstract:
The present disclosure provides one embodiment of a semiconductor structure that includes an interconnection structure formed on a semiconductor substrate; and a capacitor disposed in the interconnection structure. The interconnection structure includes a top electrode; a bottom electrode; a dielectric material layer sandwiched between the top and bottom electrodes; and a nanocrystal layer embedded in the dielectric material layer.
Public/Granted literature
- US20170200673A1 Capacitor Embedded with Nanocrystals Public/Granted day:2017-07-13
Information query
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