Invention Grant
- Patent Title: Bonded 3D integrated circuit (3DIC) structure
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Application No.: US14591784Application Date: 2015-01-07
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Publication No.: US10319701B2Publication Date: 2019-06-11
- Inventor: Chen-Hua Yu , Wen-Chih Chiou , Chung-Shi Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L25/065 ; H01L25/00 ; H01L23/00

Abstract:
An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector.
Public/Granted literature
- US20160197055A1 3D INTEGRATED CIRCUIT (3DIC) STRUCTURE AND METHOD OF MAKING SAME Public/Granted day:2016-07-07
Information query
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