Invention Grant
- Patent Title: Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects
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Application No.: US15824448Application Date: 2017-11-28
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Publication No.: US10319783B2Publication Date: 2019-06-11
- Inventor: Benjamin D. Briggs , Michael Rizzolo , Theodorus E. Standaert
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/12 ; H01L43/08 ; H01L43/02 ; H01L43/10 ; H01L21/8229 ; H01L21/8239 ; H01L21/04 ; H01L27/112 ; H01L21/67 ; H01L21/02 ; H01L21/3213 ; H01L27/11502 ; H01L27/105 ; H01L27/11585 ; H01L21/306 ; H01L21/311
Abstract:
A method is presented for forming a semiconductor structure. The method includes depositing a barrier layer, such as a tantalum nitride (TaN) layer, over a dielectric incorporating magnetic random access memory (MRAM) regions, forming magnetic tunnel junction (MTJ) stacks over portions of the TaN layer, patterning and encapsulating the MTJ stacks, forming spacers adjacent the MTJ stacks, and laterally etching sections of the TaN layer, after spacer formation, to form an electrode under the MTJ stacks. The electrode protects the MRAM regions. The electrode can be recessed from the spacers.
Public/Granted literature
- US20180197915A1 INTEGRATED MAGNETIC TUNNEL JUNCTION (MTJ) IN BACK END OF LINE (BEOL) INTERCONNECTS Public/Granted day:2018-07-12
Information query
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