Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor
Abstract:
The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer.The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide.The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide.The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.
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