A semiconductor device includes a first electrode, a first semiconductor region disposed on and electrically connected to the first electrode, a second semiconductor region disposed on the first semiconductor region and having a carrier concentration lower than that of the first semiconductor region, a third semiconductor region disposed on the second semiconductor region, a fourth semiconductor region disposed on the third semiconductor region, a fifth semiconductor region disposed on the second semiconductor region and separated from the third semiconductor region in a direction, a gate electrode disposed on the second semiconductor region, facing the third semiconductor region via an insulating layer in the direction and positioned between the third and fourth semiconductor regions, a second electrode disposed on and electrically connected to the fourth semiconductor region, and a third electrode disposed on the fifth semiconductor region, separated from the second electrode, and electrically connected to the fifth semiconductor region.