Invention Grant
- Patent Title: Semiconductor device with a steep sub-threshold slope
-
Application No.: US15222324Application Date: 2016-07-28
-
Publication No.: US10319847B2Publication Date: 2019-06-11
- Inventor: Qing Cao , Ning Li
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L27/20
- IPC: H01L27/20 ; H01L29/10 ; H01L29/16 ; H01L29/78 ; H01L29/66 ; H01L41/18 ; H01L29/735
Abstract:
A method is presented for forming a semiconductor device. The method may include forming a source contact on the semiconductor substrate, forming a drain contact on the semiconductor substrate, and forming a gate structure on the semiconductor substrate between the source and drain contacts, the gate structure including a piezoelectric material having at least one graphene layer.
Public/Granted literature
- US20180033864A1 SEMICONDUCTOR DEVICE WITH A STEEP SUB-THRESHOLD SLOPE Public/Granted day:2018-02-01
Information query
IPC分类:
